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SiC thermal field by PVT method
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Product Description
Isostatic Graphite-Optical Fiber, Semiconductor
The company develops graphite parts dedicated to optical fiber and semiconductor fields, which are suitable for a variety of scenarios.
First Generation Semiconductor(silicon wafer pulling, epitaxy, SOI): heater, crucible, insulation barrel, diversion barrel and other thermal field components
Third-generation semiconductors(Production of SiC Single Crystal and GaN Substrate Epitaxy by PVT Method): Crucible, Insulating and Heating Graphite Parts, Breathable Plate, Graphite for Substrate Epitaxy, Porous Graphite
Fiber:Heater, insulation tube, muffer tube and other graphite devices
Others:Chip Packaging, Ion Injection and Etching, Bubble Sapphire
Specification and technical index of isostatic graphite for optical fiber and semiconductor
| Indicators | Unit | GRB1 | GRB2 | GRB3 |
| Bulk density | g/cm³ | 1.78-1.80 | 1.80-1.82 | 1.82-1.85 |
| flexural strength | Mpa | 45.00 | 50.00 | 55.00 |
| Shore hardness | HS | 55.00 | 65.00 | 68.00 |
| Resistivity | Mm | 11-13 | 11-13 | 11-13 |
| Coefficient of thermal expansion | 10-6/℃ | 4.50 | 4.70 | 4.80 |
| porosity | % | 12.00 | 10.00 | 8.00 |
| average particle size | μm | 12 | 10 | 10 |
Note:1) The thermal expansion coefficient sample is 10*50mm, and the temperature is RT-600 ℃
2) product indicators and specifications can be customized according to customer requirements
3) Total ash <5ppm, trace element content can meet semiconductor requirements
The company has also developed porous graphite, air floating graphite, continuous casting graphite, electric spark graphite and other graphite materials, can provide customized products and services according to customer needs, welcome to discuss exchanges!
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CONTACT US
Liaoning Glory Carbon Co.，Ltd.
Telephone:86-024-55260802/15134129578
Zip Code: 113217
Website: www.grxcl.com.cn
Address: NanZamu Industrial Park, Xinbin Manchu Autonomous County, Fushun City, Liaoning Province
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